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Overview

General comment

Production covered

Indium Gallium Arsenide (InGaAs) PIN photodiode on InP substrate for high-speed optical detection. Lattice-matched In0.53Ga0.47As absorber for 1.0-1.65 µm wavelength range. Used in ROSA modules for datacenter transceivers. Simpler fabrication than laser diodes.

This variant represents fabrication at Coherent/Lumentum US III-V photonics (Oregon/US-WECC proxy) using electricity from the United States Western grid (WECC).

This dataset represents operation with moderate PFC gas recovery and moderate water recycling.

Modelling choices

Facility nitrogen generated on site is excluded from the purchased-mass inventory because its generation and delivery are represented as facility electricity under the SEMI S23 utility-energy convention. Nitrogen used directly by wafer processes remains included as a mass input drawn from the same on-site product stream, so it has no purchased-liquid market link. The facility electricity includes nitrogen generation only.

Support energy is allocated using 3,000 wafer starts per month. That capacity represents one fab phase or production module at a high-volume site, not the combined output of a multi-phase campus.

Gas abatement (POU + central scrubber) is allocated as a flat per-wafer facility charge, not scaled per etch/CVD pass. The epitaxy record this dataset reads states that its own water covers the cooling and the scrubbing its reactor needs, so the facility cooling tower and scrubber makeup that the support calculation charges for that tool visit is not charged again here. What remains of that makeup is a whole-wafer facility allocation, and no source divides it between the epitaxy reactor and the other steps of the flow.

Scope in detail

Operational scenario scope: the scenario changes fluorinated-gas emissions to air (SF6, CF4, C4F8, CHF3 and the CF4/COF2/SO2F2 abatement byproducts that scale on destroyed mass), the NET purchased quantity of the two gases wired to recovery on the purchase side rather than the emission side (neon, and EUV-lithography hydrogen where the process carries EUV passes - which is why those two purchase rows move between scenario cells), and fresh-water intake and wastewater. It does not change NF3, whose remote-plasma clean consumes the large majority of the charge inside the chamber, so the industry control is abatement of the small residue rather than recovery; nor the cryogenic HF/PF3 etch feeds, which are scrubbed rather than captured; nor any in-chamber reaction product. The utilisation and recovery fractions behind those statements are stated with the scenario definition that this dataset's name carries.

Manufacturing-region scope: the regional options of this family swap the electricity market this dataset draws from, and the regional supplier entry for those few upstream chemicals and gases whose supplier data is published by region. They change nothing else. Facility heating, ventilation and cooling energy stays on the region the process data was built for, so per-unit energy is the same across the regional options; water, process chemicals, gases, materials, process emissions and solid waste are the same as well. Every inventory row of these regional datasets is therefore expected to match. What the separate datasets carry is the background market each region draws on.

Technology
Standard manufacturing process
Geography
Representative region: United States, WECC (Coherent-class receiver photodiodes; per-technology region). A japan option (Sumitomo/Mitsubishi class) ships as a separate dataset.
Terms used above
  • PFC perfluorinated compounds; in power-supply contexts, power-factor correction
  • POU point of use

System boundary

System boundary - InGaAs Photodiode wafer, 100mm, United StatesSystem boundary figure: identity, gate in, entering flows, the dashed system boundary and the unit processes inside it, the reference product, emissions and waste, and below it the flows that are recorded but not quantified. No inventory quantities.InGaAs Photodiode wafer, 100mm, United StatesGATE INIncoming 100mm InP substrate as receivedENTERING FLOWSElectricityWaterProcess gasesProcess chemicalsSYSTEM BOUNDARYMODELLED UNIT PROCESSES, BY CLASSDepositionInGaAs epitaxy MOVPECVD nitridePVD contact Ti Pt AuPVD contact auge Ni AuEtchPlasma etch iii vOtherWafer dicingTestWafer probe testREFERENCE PRODUCTInGaAs Photodiode wafer, 100mm,United StatesWafer-level test and inspection of thefinished InGaAs photodiode epi waferEMISSIONS AND WASTEEmissions to airEmissions to waterWaste routesRECORDED BUT NOT QUANTIFIEDIn scope, left out of the quantified inventoryCut off below the significance threshold, or with no background dataset available - each is listed with its reason8FLOWSsystem boundaryreference flowentering flowemission / waste

The figure groups this dataset's unit processes by class. It is not a count of manufacturing steps — each process runs over as many passes as the flow requires, and those pass counts ship with the dataset.

Download this figure (SVG)

Data quality and references

Composite DQI 2.3 Good
Reliability
2.7
Completeness
2.4
Temporal
1.9
Geographic
2.0
Technological
2.7
How the score is calculated: Sources used across more manufacturing steps have more influence. Sources that define assumptions for the whole model account for 72.4% of the total weighting.

Pedigree scores follow the ecoinvent data-quality matrix: 1 is the best attainable, 5 the weakest. The composite is their aggregate.

Sampling procedure
Component vendor specifications, academic papers, industry literature
Coverage status
Partial
Pedigree-scored source files
13 — the source records behind this dataset's manufacturing operations. Each carries the five pedigree axes above; the composite DQI aggregates them.

Technosphere inputs

16 flows. Quantities are not published; they ship with the dataset on Circa.

TMIn production Process gasg · -37.5% / +50%
Derivation basis
  • Scaled from InP laser

No source is attached to this row.

Source citations
Not stated
Upstream REEL dataset
Trimethylindium (In(CH3)3)
Background dataset
Modelled by REEL; see the upstream dataset above.
Uncertainty
-37.5% / +50% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
TMGa production Process gasg · -33.3% / +50%
Derivation basis
  • Estimated for In0.53Ga0.47As composition

No source is attached to this row.

Source citations
Not stated
Upstream REEL dataset
Trimethylgallium (Ga(CH3)3)
Background dataset
Modelled by REEL; see the upstream dataset above.
Uncertainty
-33.3% / +50% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Water supply (municipal) Waterm3 · -16.5% / +24.7%
Derivation basis
  • Calculated from process-water and ultrapure-water demand across all manufacturing operations, plus facility water allocated to each finished unit. The fresh intake shown is that demand less the share reused under the water-recycling scenario this dataset assumes, and wastewater follows the same balance.

No source is attached to this row.

Source citations
Not stated
Upstream REEL dataset
Water Supply (Municipal)
Background dataset
Modelled by REEL; see the upstream dataset above.
Notes
Net fresh-water intake, supplied as municipal water
Uncertainty
-16.5% / +24.7% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
m3
Electricity, United States – Western Grid (WECC) ElectricitykWh · -18.5% / +25.2%
Derivation basis
  • Calculated from equipment energy across all manufacturing operations, plus facility support such as cleanroom HVAC, ultrapure water, cooling, gas abatement, and bulk gases.
  • Facility nitrogen electricity is rebased from the reference fab by wafer area. Its uncertainty band varies delivered energy intensity only; the estimate-class reference volume is unbanded. Direct process nitrogen remains an on-site product mass under cutoff accounting. The shared bulk-gas route for 300 mm logic and memory wafers remains unchanged pending a scheduled corpus-wide review.

The sources below come from the manufacturing operations behind this row.

Sources (inherited)
Inherited, rolled up from the contributing process steps:
  • CAE Online: Teradyne Catalyst Specifications
  • EE Journal: "Advantest Unveils New Ultra-High-Current Power Supply" (2024)
  • 4Semi: TEL Precio Wafer Prober Specifications
  • FormFactor Summit 11000/12000 Facility Planning Guide
  • 3D InCites: "ERS Electronic Introduces High Power Dissipation Thermal Chuck" (2023)
  • Abachy: "How Much Energy and Water Are Required for Wafer Fabrication" (2025)
  • Disco Corporation DFD6361 dicing saw specifications (blade-dicing process power and wafer throughput)
  • Hu et al. (2019). Analysis of energy efficiency improvement of high-tech fabrication plants. International Journal of Low-Carbon Technologies. DOI: 10.1093/ijlct/ctz041.
  • Liu, Elgowainy and Wang (2020), Green Chemistry 22, 5751-5761, DOI 10.1039/D0GC02301A
Background data
ecoinvent 3.12
Background dataset
electricity, high voltage
Uncertainty
-18.5% / +25.2% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
kWh
PH3 Process gasg · -35.7% / +42.9%
Derivation basis
  • Scaled from InP laser

No source is attached to this row.

Source citations
Not stated
Background data
proxy-mapped
Background dataset
phosphorus, white, liquid
Uncertainty
-35.7% / +42.9% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
AsH3 Process gasg · -37.5% / +50%
Derivation basis
  • Estimated - InGaAs is thicker absorber layer

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
arsine
Uncertainty
-37.5% / +50% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
H2 Process gasg · -40% / +60%
Derivation basis
  • Calculated from per-operation consumption, operation counts, and manufacturing yield.

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
hydrogen, gaseous, low pressure
Uncertainty
-40% / +60% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
H2S Process gasg · -67% / +199.9%
Source citations
  • DOE/PNNL PNNL-21443 Table 5-4 dopant supply for 100 mm MOCVD epitaxy, via the blue-LED MOCVD epitaxy record in this database
Background data
ecoinvent 3.12
Background dataset
hydrogen sulfide
Uncertainty
-67% / +199.9% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Cl2 Process gasg · -33.3% / +66.7%
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch recipe authored in this database for VCSEL fabrication (VCSEL fabrication literature, equipment vendor specs)

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
chlorine, liquid
Uncertainty
-33.3% / +66.7% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Ar Process gasg · ±0.5%
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch recipe authored in this database for VCSEL fabrication (VCSEL fabrication literature, equipment vendor specs)

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
argon, liquid
Uncertainty
±0.5% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
SiH4 Process gasg · -42.9% / +42.8%
Derivation basis
  • Calculated from per-operation consumption, operation counts, and manufacturing yield.

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
  • EPA Subpart I
Background data
ecoinvent 3.12
Background dataset
silicon tetrahydride
Uncertainty
-42.9% / +42.8% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
NH3 Process gasg · ±57.9%
Derivation basis
  • Calculated from per-operation consumption, operation counts, and manufacturing yield.

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
  • EPA Subpart I
Background data
ecoinvent 3.12
Background dataset
ammonia, anhydrous, liquid
Uncertainty
±57.9% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Compressed air Process gasg · ±33.3%
Source citations
  • CAE Online: Teradyne Catalyst Specifications
  • EE Journal: "Advantest Unveils New Ultra-High-Current Power Supply" (2024)
  • 4Semi: TEL Precio Wafer Prober Specifications
  • FormFactor Summit 11000/12000 Facility Planning Guide
  • 3D InCites: "ERS Electronic Introduces High Power Dissipation Thermal Chuck" (2023)
  • Abachy: "How Much Energy and Water Are Required for Wafer Fabrication" (2025)
Background data
ecoinvent 3.12
Background dataset
compressed air, 700 kPa gauge
Uncertainty
±33.3% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
O2 Process gasg
Derivation basis
  • Calculated from per-operation consumption, operation counts, and manufacturing yield.

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
oxygen, liquid
Uncertainty
No range defined.
Unit
g
Natural gas, burned in industrial furnace (facility heating, low-NOx) Process chemicalMJ · -30% / +50%
Derivation basis
  • Scaled from the InP laser epitaxy basis

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
heat production, natural gas, at industrial furnace low-NOx >100kW
Uncertainty
-30% / +50% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
MJ
Natural gas, burned in industrial furnace (POU abatement, low-NOx) Process chemicalMJ · -50% / +150%
Derivation basis
  • Calculated from per-operation consumption, operation counts, and manufacturing yield.

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12
Background dataset
heat production, natural gas, at industrial furnace low-NOx >100kW
Uncertainty
-50% / +150% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
MJ

Outputs and waste

Wastewater Wastewaterm3 · -16.5% / +24.7%
Derivation basis
  • Calculated from the water balance: fresh-water input minus evaporation.

No source is attached to this row.

Source citations
Not stated
Background data
carried, no background dataset
Background dataset
No treatment route recorded for this output.
Uncertainty
-16.5% / +24.7% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
m3
Phosphate precipitation solids (as PO4) Solid wasteg · -36% / +43.2%
Derivation basis
  • Mass balance on the phosphine input; PH3 oxidised to phosphate in the abatement train

The sources below come from the manufacturing operations behind this row.

Sources (inherited)
Inherited, rolled up from the contributing process steps:
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of inert waste, sanitary landfill
Uncertainty
-36% / +43.2% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Arsenic-bearing scrubber sludge (As2O3) Solid wasteg · -37.6% / +50.1%
Derivation basis
  • Mass balance on the arsine input; 2 AsH3 + 3 O2 -> As2O3 + 3 H2O

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
-37.6% / +50.1% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Spent scrubber media (phosphorus- and arsenic-loaded) Solid wasteg · -34.2% / +550.7%
Source citations
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
-34.2% / +550.7% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Chamber deposits (phosphide and arsenide metal residue) Solid wasteg · -40% / +60%
Derivation basis
  • Calculated from the mass balance of spent materials and consumables, with treatment selected from the waste classification.

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
-40% / +60% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Etch byproduct scrubber sludge (III-V/nitride metal chlorides) Solid wasteg · -40% / +60%
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch byproduct row authored in this database for VCSEL fabrication

No source is attached to this row.

Source citations
Not stated
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
-40% / +60% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Chamber parts (quartz, ceramics) Solid wasteg · -60.4% / +145.3%
Source citations
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of inert waste, sanitary landfill
Uncertainty
-60.4% / +145.3% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Chamber deposits Solid wasteg · -25% / +25.2%
Derivation basis
  • Calculated from the mass balance of spent materials and consumables, with treatment selected from the waste classification.

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
  • EPA Subpart I
  • IPCC 2019 Guidelines Vol 3 Ch 6
  • EPA 40 CFR Part 98 Subpart I (2024)
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
-25% / +25.2% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Intact un-eroded sputter target body (Ti) Solid wasteg · -33.4% / +66.6%
Source citations
Background data
ecoinvent 3.12 treatment route
Background dataset
material recovery (material dependent - typically recycled)
Uncertainty
-33.4% / +66.6% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Cleave debris Solid wasteg · -40% / +60.1%
Source citations
  • Semiconductor Digest, reported blade-dicing kerf width
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
-40% / +60.1% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
III-V filter cake (dicing sludge) Solid wasteg
Source citations
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Uncertainty
No range defined.
Unit
g
Scrapped material (line yield) Solid wastem2 · -72.2% / +58.8%
Background data
ecoinvent 3.12 treatment route
Background dataset
treatment of hazardous waste, underground deposit
Notes
Calculated reject material after accounting for a manufacturing yield of 90%. Wafer starts that do not complete processing, at the modeled line yield of 90 percent. Line yield here counts test, monitor, and damaged wafers against wafers processed - the inclusive convention of the cited fab benchmarking and life cycle studies. The 0.85 to 0.97 uncertainty band on the yield spans measured multi-fab benchmarking: the low end reflects below-average lines and deep multi-layer flows; the high end reflects the best benchmarked lines, which reach about 97 to 98 percent.
Uncertainty
-72.2% / +58.8% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
m2

Emissions to air

6 elementary flows released to air by this dataset's own operations. Quantities are not published; they ship with the dataset on Circa.

In(CH3)3 Emission to airg
Derivation basis
  • Scaled from InP laser
  • No corresponding ecoinvent dataset or flow was identified for this entry, so it is published with its own quantity and no background link

No source is attached to this row.

Source citations
Not stated
Compartment
Air (non-urban air or from high stacks)
CAS number
3385-78-2
ecoinvent 3.12 elementary flow
Not stated
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
H2S Emission to airg
Source citations
  • DOE/PNNL PNNL-21443 Table 5-4 dopant supply for 100 mm MOCVD epitaxy, via the blue-LED MOCVD epitaxy record in this database
Compartment
Air (non-urban air or from high stacks)
CAS number
7783-06-4
ecoinvent 3.12 elementary flow
Hydrogen sulfide
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
Zn(C2H5)2 Emission to airg
Derivation basis
  • No corresponding ecoinvent dataset or flow was identified for this entry, so it is published with its own quantity and no background link

The sources for this row are listed below.

Source citations
  • Molar read-across of the sourced Cp2Mg p-dopant supply in the blue-LED MOCVD epitaxy record in this database (arXiv:2203.10654)
Compartment
Air
ecoinvent 3.12 elementary flow
Not stated
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
Hydrogen chloride Emission to airg
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch recipe authored in this database for VCSEL fabrication (VCSEL fabrication literature, equipment vendor specs)

No source is attached to this row.

Source citations
Not stated
Compartment
Air (non-urban air or from high stacks)
Formula
HCl
CAS number
7647-01-0
ecoinvent 3.12 elementary flow
Hydrochloric acid
Notes
BCl3 + 3H2O → B(OH)3 + 3HCl; air HCl = stoich×0.02 scrubber slip (cross-compartment split)
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
Cl2 Emission to airg
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch recipe authored in this database for VCSEL fabrication (VCSEL fabrication literature, equipment vendor specs)

No source is attached to this row.

Source citations
Not stated
Compartment
Air (non-urban air or from high stacks)
CAS number
7782-50-5
ecoinvent 3.12 elementary flow
Chlorine
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
NH3 Emission to airg
Derivation basis
  • Calculated as an air release, from a mass balance on the process gases going in, with the destruction or removal efficiency of any point-of-use abatement applied.

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
  • EPA Subpart I
  • IPCC 2019 Guidelines Vol 3 Ch 6
  • EPA 40 CFR Part 98 Subpart I (2024)
Compartment
Air (non-urban air or from high stacks)
CAS number
7664-41-7
ecoinvent 3.12 elementary flow
Ammonia
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g

Emissions to water

4 elementary flows released to water by this dataset's own operations. Quantities are not published; they ship with the dataset on Circa.

Chloride Emission to waterg
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch recipe authored in this database for VCSEL fabrication (VCSEL fabrication literature, equipment vendor specs)

No source is attached to this row.

Source citations
Not stated
Compartment
Water (surface water)
Formula
Cl-
CAS number
16887-00-6
ecoinvent 3.12 elementary flow
Chloride
Notes
BCl3 scrubbed Cl⁻ to wastewater (98% POU scrubber; Cl⁻/HCl mass ratio 35.45/36.46)
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
PO4 3- Emission to waterg
Derivation basis
  • Mass balance on the phosphine input; precipitation removal follows the phosphate effluent convention used for implant scrubber discharge in this database

No source is attached to this row.

Source citations
Not stated
Compartment
Water (surface water)
Formula
PO43-
CAS number
14265-44-2
ecoinvent 3.12 elementary flow
Phosphate
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
As Emission to waterg
Derivation basis
  • Mass balance on the arsine input; precipitation removal follows the arsenic effluent convention used for implant scrubber discharge in this database

No source is attached to this row.

Source citations
Not stated
Compartment
Water (surface water)
CAS number
7440-38-2
ecoinvent 3.12 elementary flow
Arsenic ion
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g
Suspended III-V dicing solids Emission to waterg
Source citations
Compartment
Water (surface water)
ecoinvent 3.12 elementary flow
Suspended solids, unspecified
Uncertainty
A minimum-maximum range is defined for this flow. Bounds ship with the dataset on Circa.
Unit
g

Flows not quantified

8 flows are recorded for this dataset but carry no quantity — cut off below the significance threshold, or with no background dataset available. They remain inside the declared system boundary; each is listed with its reason.

Cut off - below the significance threshold (4)

InP <001> S-doped substrate Substrate materialm2 · -7.2% / +5.9%
Derivation basis
  • Calculated from per-operation consumption, operation counts, and manufacturing yield.

No source is attached to this row.

Source citations
Not stated
Background data
cut off
Background dataset
Not applicable: this flow is not quantified in the inventory.
Notes
InP <001> S-doped substrate (100mm diameter, 0.007854 m2)
Reason
No wafer-level production dataset available in ecoinvent for InP <001> S-doped. Raw material datasets (e.g. gallium, silicon carbide powder) exist but miss crystal growth and wafering which dominate the environmental footprint.
Uncertainty
-7.2% / +5.9% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
m2
Ti sputtering target Materialkg · -28.6% / +42.9%
Derivation basis
  • This flow is a consumable of the manufacturing operation. The model reads it from the operation's own inventory rather than from the product's bill of materials.

The sources for this row are listed below.

Source citations
Background data
cut off
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
The sputtering target is recorded at its authored mass. No representative production dataset for the target metal is available, so its upstream burden is left unlinked rather than approximated with an unrelated metal.
Uncertainty
-28.6% / +42.9% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
kg
N2 Process gasg · -12% / +16.4%
Derivation basis
  • This quantity is process nitrogen rather than a facility allocation. The model draws its bulk nitrogen from an on-site generator, and the energy that generator uses is carried in the facility electricity, so no capacity-scaled facility base is added to this row. What the row contains is the purge nitrogen the lithography, etch and deposition passes of this process flow consume, together with the nitrogen the contributing process files author for their own steps. The intervals those process files publish carry through into the interval shown here, while the per-pass purge allowance is a point estimate that is held at the same value at both ends of it.

The sources below come from the manufacturing operations behind this row.

Source citations (specific to this process)
Inherited, rolled up from the contributing process steps:
  • EPA Subpart I
Background data
cut off
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
Direct process nitrogen is retained as inventory mass drawn from the on-site product stream. Its generation and delivery are carried in facility electricity, so a purchased-liquid market link would duplicate the upstream supply burden.
Uncertainty
-12% / +16.4% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
BCl3 Process gasg · -40% / +60%
Derivation basis
  • Authored GaAs/AlGaAs ICP-RIE mesa-etch recipe authored in this database for VCSEL fabrication (VCSEL fabrication literature, equipment vendor specs)

No source is attached to this row.

Source citations
Not stated
Background data
cut off
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
Boron trichloride is consumed at low rate in metal etch, and no production dataset for it exists in the background database used for linkage. It is scrubbed in wet abatement and its primary emission product, hydrogen chloride, is tracked separately in this inventory, so no upstream production dataset is attached here.
Uncertainty
-40% / +60% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g

Not modelled (2)

Au sputtering target Materialkg
Derivation basis
  • This flow is a consumable of the manufacturing operation. The model reads it from the operation's own inventory rather than from the product's bill of materials.

The sources for this row are listed below.

Source citations
Background data
not modelled
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
The gold conductor of this contact IS deposited and is named here; its mass is withdrawn rather than carried, because the retained allocation is orders of magnitude above the film this contact actually deposits, and a gold sputter target is a thin bonded plate on a reclaimed backing rather than the monolithic refractory blank that allocation divides.
Uncertainty
No range defined.
Unit
kg
AuGe sputtering target Materialkg
Derivation basis
  • This flow is a consumable of the manufacturing operation. The model reads it from the operation's own inventory rather than from the product's bill of materials.

The sources for this row are listed below.

Source citations
Background data
not modelled
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
The AuGe eutectic ohmic layer IS deposited and is named here; its mass is withdrawn rather than carried, for the same reason as the gold cap: it is a gold-bearing bonded target, and the retained blank allocation is orders of magnitude away from the film this step deposits.
Uncertainty
No range defined.
Unit
kg

Not quantified - no background dataset available (2)

Zn(C2H5)2 Process gasg · -66.7% / +199.9%
Source citations
  • Molar read-across of the sourced Cp2Mg p-dopant supply in the blue-LED MOCVD epitaxy record in this database (arXiv:2203.10654)
Background data
no background dataset
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
The zinc dopant precursor for compound-semiconductor epitaxy. No diethylzinc production activity exists in the background database used for linkage. Zinc metal is mapped in this inventory, but making a pyrophoric alkyl-zinc compound is not what zinc metal production represents, so it is not substituted. The quantity is recorded here and its upstream production is left unlinked.
Uncertainty
-66.7% / +199.9% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g
Scrubber media (dry-bed chemisorbent) Process chemicalg · -34.2% / +550.7%
Source citations
Background data
no background dataset
Background dataset
Not applicable: this flow is not quantified in the inventory.
Reason
Purchased granulate for point-of-use dry-bed abatement of hydride process gases. No chemisorbent or sorbent abatement-medium activity exists in the background database used for linkage. Its burden is dominated by the impregnated reactive phase that makes it a scavenger, and vendors do not disclose that chemistry, so a generic carbon-supported substitute would carry the wrong material. The quantity is recorded here and its upstream production is left unlinked.
Uncertainty
-34.2% / +550.7% around the published quantity. The bounds themselves ship with the dataset on Circa.
Unit
g

Limitations and unquantified flows (4)

Limits this dataset declares about itself: first any limit stated in its own description, then any limit it declares flow by flow, grouped by channel. Each entry below is the model's own disclosure.

From the dataset description

  • Supply energy for argon, oxygen, and clean dry air is excluded because the former aggregate provides no defensible component split. The energy-only convention also omits upstream gas-plant infrastructure, transport losses, and other non-electricity burdens associated with delivered liquid nitrogen.
  • At most the whole of the cooling tower and scrubber makeup remaining in the support charge is an overlap with the epitaxy record's own water; how much of it actually is remains unresolved, and the two are published as they stand.

Materials

  • These flows are named in this inventory but ship without a quantity, so their burden is not carried anywhere in the dataset: Au sputtering target; AuGe sputtering target. Each row states its own reason on the row itself.

General

  • Wafer-dicing kerf and filter-cake outputs on this dataset are carried unchanged from the dicing process file's reference wafer, which is a larger-diameter silicon wafer than the one modelled here, and are not rescaled to this wafer's diameter, thickness or substrate. That file publishes no wafer thickness, no substrate density and no cut length to rescale from, and states its kerf width three different ways, so no consumer-specific value can be derived from it; the filter cake is a wastewater-treatment residue with no geometric basis at all. Treat both rows as the reference wafer's figures rather than this product's. The flow name on this dataset has been localised to this substrate, but the quantity behind it has not: it is still the reference silicon wafer's.

The flows above are this dataset's own records. What follows are the scope rules set once for the whole database in the methodology report, repeated here so every dataset page carries them.

Database-wide boundary policy — applies to every REEL dataset

These boundaries are set once for the whole database, in Chapter 2 of the methodology report, and apply to this dataset wherever they are relevant to it. The excluded flows listed above are specific to this dataset.

Use phase
Product operation is outside the cradle-to-gate scope.
End-of-life treatment
Recycling and disposal are outside the cradle-to-gate scope.
Distribution and retail
The gate is a finished component ready for integration into a higher-level assembly.
Inbound transport of raw materials
Transport of purchased raw materials to the manufacturing facility is already inside the upstream "market for" datasets that users link to a background database, so it is not modelled a second time here. This does not cover freight between REEL production stages, which is modelled where a dataset authors it.
Returnable shipping containers
Where freight between production stages is modelled, the mass moved is the product itself. The shipping container (FOSB, SEMI M31) is returnable capital equipment whose per-trip share is unsourced, so its tare is excluded from the transport effort.
Photomask fabrication
A mask set's embodied burden is amortised across a high-volume production run and is not attributed per wafer. Users assessing low-volume production should add mask fabrication separately; the methodology report gives the basis for the exclusion.
Employee transport, administration and R&D overhead
Employee transportation, facility administration and R&D/pilot-production overhead are outside scope.
Capital goods
Manufacturing equipment, cleanroom construction and facility infrastructure are excluded, on the grounds of absent public data on equipment embodied energy, uncertainty in equipment lifetime and allocation, common practice in electronics LCA, and a focus on the operational inventory. Future versions may include capital goods when sufficient public data becomes available.
Precious metal recovery credits
Scrap recovery credits for precious metals are excluded pending data availability.
Wafer reclaim
Test wafers and scrap are outside the system boundary.

Inside the boundary, linked rather than modelled

Silicon ingot growth and wafer slicing
Inside the cradle-to-gate scope, but treated as upstream material inputs linked to background databases rather than modelled as REEL processes.
Freight between production stages
Where a dataset's product moves between REEL production stages - wafer fabrication to the packaging site, for example - that leg is authored as a transport service and linked to an ecoinvent freight activity. It is measured as a transport effort in tonne-kilometres, not as a mass. Route distances are authored per route class with a stated band; a lower bound of zero is a modelling statement that the two sites can be co-located, not a missing value.

Cut-off criteria

A flow is excluded from a process inventory when it contributes less than 1 % of the total mass of inputs to that unit process, or less than 1 % of its total energy input. The denominator is total process inputs, not product mass. That distinction matters in semiconductor manufacturing, where the input mass of water, chemicals and gases greatly exceeds the product mass, so the threshold removes only genuinely minor flows.

Included regardless of the cut-off

  • Perfluorocarbons (CF4, C2F6, SF6, NF3) - high GWP, EPA regulated
  • Heavy metals (Pb, Cd, Hg, Cr(VI)) - RoHS regulated, high toxicity
  • Volatile organics (photoresist solvents, PGMEA) - air quality
  • Precious metals (Au, Ag, Pd, Pt) - high embodied impacts
  • Ozone-depleting substances (legacy CFCs, HCFCs) - Montreal Protocol